1 www.fairchildsemi.com ?2012 fairchild semiconductor corporation fdp16n50 / fdpf16 n50 / FDPF16N50t rev. c1 fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm mosfet fdp16n50 / FDPF16N50 / FDPF16N50t n- channel unifet tm mosfet 500 v , 16 a, 380 m features ? r ds(on) = 380 m (max.) @ v gs = 10 v, i d = 8 a ? low gate charge (ty p. 32 nc) ? low crss (typ. 20 pf) ? 100% a valanche tested description unife t tm mos f et i s fairchild s e m i co n d u ctor ? s h i g h volt age m o sfe t f a m i l y based o n plan a r st ripe an d d m o s t e ch n o l o gy . t h i s m o sfet is ta i l o red t o r e d uc e o n -s ta te re sistance, an d to p rov i d e bett e r s wit ch i n g p erfor m a n ce a nd high e r a valan ch e ene rgy s tr e n g th . th i s d e vic e f a m i l y i s suit a b l e f o r switching p o wer con ve rt e r app l i cations s u ch a s pow e r f a ct or co rr e ct i o n (p f c) , f l a t p a nel dis p l a y (fpd) tv po wer , a t x and ele ct ron i c l a m p b a l l a st s. to-220 to-220f d g s absolute maximum ratings symbol parameter fdp16n50 FDPF16N50 / FDPF16N50t unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 16 9.6 16 * 9.6 * a a i dm drain current - pulsed (note 1) 64 64 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 780 mj i ar avalanche current (note 1) 16 a e ar repetitive avalanche energy (note 1) 20 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 200 1.59 38.5 0.3 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter fdp16n50 FDPF16N50 / fdpf 16 n50t unit r jc thermal resistance, junction-to-case , max. 0.63 3.3 c/w r cs thermal resistance, case-to-sink , typ. 0.5 -- c/w r ja thermal resistance, junction-to-ambient , max. 62.5 62.5 c/w * drain current limited by maximum junction temperature applications ? lcd/led/pdp tv ? lighting ? uninterruptible power supply april 2013 g d s g d s
2 package marking and ordering information device marking device package reel size tape width quantity FDPF16N50 FDPF16N50 to-220f - - 50 FDPF16N50t FDPF16N50t to-220f - - 50 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max unit off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 500 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate voltage drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 8a -- 0.31 0.38 g fs forward transconductance v ds = 40v, i d = 8a (note 4) -- 23 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1495 1945 pf c oss output capacitance -- 235 310 pf c rss reverse transfer capacitance -- 20 30 pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 16a r g = 25 (note 4, 5) -- 40 90 ns t r turn-on rise time -- 150 310 ns t d(off) turn-off delay time -- 65 140 ns t f turn-off fall time -- 80 170 ns q g total gate charge v ds = 400v, i d = 16a v gs = 10v (note 4, 5) -- 32 45 nc q gs gate-source charge -- 8.5 -- nc q gd gate-drain charge -- 14 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 9.2 a i sm maximum pulsed drain-source diode forward current -- -- 37 a v sd drain-source diode forward voltage v gs = 0v, i s = 16a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 16a di f /dt =100a/ s (note 4) -- 490 -- ns q rr reverse recovery charge -- 5.0 -- c notes: 1. repetitive rating: pulse width limit ed by m aximum junction temperature 2. l = 5.5mh, i as = 16a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 16a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, du ty cycle 2% 5. essentially independent of operating temperature typical characteristics fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation fdp16n50 / fdpf16 n50 / FDPF16N50t rev. c1
3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2 . t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681 01 2 10 0 10 1 150 o c 25 o c -55 o c * notes : 1 . v ds = 40v 2 . 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 0.2 0.3 0.4 0.5 0.6 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 0 10 1 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 1 02 03 04 0 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 16a v gs , gate-source voltage [v] q g , total gate charge [nc] fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation fdp16n50 / fdpf16 n50 / FDPF16N50t rev. c1
4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area - fdp16n50 - FDPF16N50 / FDPF16N50t figure 10. maximum drain currentvs. case temperature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1 . v gs = 10 v 2 . i d = 8 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1 . t c = 25 o c 2 . t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 20 i d , drain current [a] t c , case temperature [ o c] fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation fdp16n50 / fdpf16 n50 / FDPF16N50t rev. c1
5 typical performance characteristics (continued) figure 11-1 . trans ient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1. z jc (t) = 0.63 o c/w max. 2 . d u ty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2 - fdp16n50 figure 11-2. tran si e nt thermal response curve - FDPF16N50 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1. z jc (t) = 3.3 o c/w max. 2 . d u ty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2 / FDPF16N50t fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation fdp16n50 / fdpf16 n50 / FDPF16N50t rev. c1
6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation fdp16n50 / fdpf16 n50 / FDPF16N50t rev. c1
peak diode recovery dv/dt test circuit & waveforms fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation fdp16n50 / fdpf16 n50 / FDPF16N50t rev. c1 www.fairchildsemi.com ?2012 fairchild semiconductor corporation fdp16n50 / fdpf16 n50 / FDPF16N50t rev. c1 7 www.fairchildsemi.com ? 2012 f airchild sem i c o n d uctor c o rpor a ti on fdp 16n50 / fdpf16 n50 / FDPF16N50t rev. c1
dimensions in millimeter s mechanical dimensions to-220b03 fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm 8
mechanical dimensions dimensions in millimeters to-220m03 fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm 9
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fdp16n50 / FDPF16N50 / FDPF16N50t n-channel unifet tm 10
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